Semiconductor device and method for manufacturing thereof

ABSTRACT

A semiconductor device has a first semiconductor chip  10  molded with a resin  12 , a first metal  14  provided in the resin  12  in a circumference of the first semiconductor chip  10 , and being exposed on a lower surface of the resin  12 , a second metal  16  provided in the resin  12  over the first metal  14 , and being exposed on an upper surface of the resin  12 , and a first wire  18  coupling the first semiconductor chip  10  to the first metal  14  and the second metal  16 . The first wire  18  is coupled to the first metal  14  and the second metal  16  so as to be sandwiched therebetween.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present invention is based on Japanese Patent Application No.2007-174660 filed on Jul. 2, 2007, the disclosure of which is herebyincorporated by reference.

TECHNICAL FIELD

The present invention relates to a semiconductor device and a method formanufacturing the same and, more particularly, to a stackablesemiconductor device and a method for manufacturing the same.

BACKGROUND OF THE INVENTION

In recent years, miniaturization is required for semiconductor deviceswhich are used as non-volatile storage mediums in, for example, portableelectronic devices such as a mobile telephones and integrated circuitmemories. For that purpose, a technology to efficiently package asemiconductor chip is required and one such technique to stacksemiconductor devices, a package-on-package (POP) technology which has asemiconductor chip mounted on one or more other semiconductor chips, hasbeen developed.

Disclosed in Japanese Patent Application Publication No.JP-A-2003-60121, as a method for manufacturing a semiconductor device, asolder ball is provided on a lower die in a circumference of asemiconductor chip and, as for the solder ball to be pressed via a leadframe, an upper die is joined together. Thereafter, the semiconductorchip, the lead frame and the solder ball are molded to complete thedisclosed method for manufacturing the semiconductor device having apart of the solder ball being exposed.

In a semiconductor device having a semiconductor chip mounted, a costreduction is a consistent issue. For example, in the semiconductordevice described in JP-A-2003-60121, a lead frame is used for aninternal wiring of the semiconductor device. Further, in a semiconductordevice in related art, other than a lead frame, a wiring substrate andsuch are used. These lead frames, wiring substrates and such areparticularly expensive among the materials used for the semiconductordevice and occupy a substantial portion of the material cost of thesemiconductor device.

Particularly, when stacking semiconductor devices, as lead frames,wiring substrates and such are used in each of the semiconductor devicesprior to be stacked, if the number of stacking semiconductor devices isincreased, a cost increase is undeniable.

SUMMARY OF THE INVENTION

The present invention has been made in view of the above circumstances,and has an object to provide a semiconductor device which can promote acost reduction and a method for manufacturing the same.

A semiconductor device according to an aspect of the present inventionincludes: a first semiconductor chip molded with a resin; a first metalprovided in the resin in a circumference of the first semiconductorchip, and being exposed on a lower surface of the resin; a second metalprovided in the resin over the first metal, and being exposed on anupper surface of the resin; and a first wire coupling the firstsemiconductor chip to the first metal and the second metal. The firstwire is coupled to the first metal and the second metal so as to besandwiched therebetween. According to this aspect of the presentinvention, a semiconductor device having a first semiconductor chippackaged can be made without using lead frames or wiring substrates.Accordingly, a cost reduction of a semiconductor device can be promoted.

A method for manufacturing a semiconductor device according to anotheraspect of the present invention includes: forming a plurality of firstmetals on a first support; mounting a plurality of first semiconductorchips on the first support so as to be adjacent to some of the pluralityof first metals; coupling adjacent first semiconductor chips among theplurality of first semiconductor chips to each other with a first wireover the first metals; forming a plurality of second metals on a secondsupport; joining the first support and the second support byrespectively coupling the plurality of first metals and the plurality ofsecond metals to each other so as to sandwich the first wire; forming aresin that molds the plurality of first semiconductor chips by fillingan area between the first support and the second support with resin;peeling off the first support and the second support from the resin; andcutting the resin so as to include the first semiconductor chip.According to this aspect of the present invention, a semiconductordevice having a first semiconductor chip packaged can be made withoutusing lead frames or wiring substrates. Accordingly, a cost reduction ofa semiconductor device can be promoted.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a top view of a semiconductor device of a first embodiment ofthe present invention and FIG. 1B is a cross-sectional view taken alongthe line A-A in FIG. 1A;

FIG. 2A is a top view (part 1) showing a method for manufacturing thesemiconductor device of the first embodiment and FIG. 2B is across-sectional view (part 1);

FIG. 3A is a top view (part 2) showing the method for manufacturing thesemiconductor device of the first embodiment and FIG. 3B is across-sectional view (part 2);

FIG. 4A is a top view (part 3) showing the method for manufacturing thesemiconductor device of the first embodiment and FIG. 4B is across-sectional view (part 3);

FIG. 5A is a top view (part 4) showing the method for manufacturing thesemiconductor device of the first embodiment and FIG. 5B is across-sectional view (part 4);

FIG. 6A is a top view (part 5) showing the method for manufacturing thesemiconductor device of the first embodiment and FIG. 6B is across-sectional view (part 5);

FIG. 7A is a top view (part 6) showing the method for manufacturing thesemiconductor device of the first embodiment and FIG. 7B is across-sectional view (part 6);

FIG. 8A is a top view (part 7) showing the method for manufacturing thesemiconductor device of the first embodiment and FIG. 8B is across-sectional view (part 7);

FIG. 9 is an illustration showing when coupling adjacent firstsemiconductor chips 10 together via a second conductor 32 formed inbetween the adjacent first semiconductor chips 10;

FIG. 10 is a cross-sectional view of a semiconductor device of a secondembodiment of the present invention;

FIG. 11A is a top view of a semiconductor device of a third embodimentof the present invention and FIG. 11B is a cross-sectional view takenalong the line A-A in FIG. 11A;

FIG. 12A is a top view (part 1) showing a method for manufacturing thesemiconductor device of the third embodiment and FIG. 12B is across-sectional view (part 1); and

FIG. 13A is a top view (part 2) showing the method for manufacturing thesemiconductor device of the third embodiment and FIG. 13B is across-sectional view (part 2).

DETAILED DESCRIPTION

Hereafter, with reference to drawings, embodiments of the presentinvention will be described.

First Embodiment

FIG. 1A is a top view of a semiconductor device of a first embodiment ofthe present invention and FIG. 1B is a cross-sectional view taken alongthe line A-A in FIG. 1A. In FIG. 1A, a first semiconductor chip 10 andsuch are shown viewed through a resin 12. In reference to FIGS. 1A and1B, with the resin 12 made of, for example an epoxy resin, the firstsemiconductor chip 10 is being molded. In the resin 12 in acircumference of the first semiconductor chip 10, a first metal 14exposed on a lower surface of the resin 12 is provided. On the resin 12over the first metal 14, exposed on an upper surface of the resin 12, asecond metal 16 which is electrically coupled to the first metal 14 isprovided. More specifically, the first metal 14 and the second metal 16are surrounded by the resin 12, a part of the first metal 14 is beingexposed on the lower surface of the resin 12, and a part of the secondmetal 16 is being exposed on the upper surface of the resin 12. Thefirst metal 14 and the second metal 16 are in a spherical shape, and amaterial of, for example, a copper (Cu) ball plated with gold (Au) canbe used. A first wire 18 which electrically couples the firstsemiconductor chip 10 to the first metal 14 and the second metal 16 andis made of, for example, Au is being coupled to the first metal 14 andthe second metal 16 so as to be sandwiched therebetween.

Next, with reference to FIGS. 2A to 8B, a method for manufacturing thesemiconductor device of the first embodiment will be described. FIGS.2A, 3A, 4A, 5A, 6A, 7A and 8A are top views and FIGS. 2B, 3B, 4B, 5B,6B, 7B and 8B are cross-sectional views taken along the lines A-A inrespective FIGS. 2A, 3A, 4A, 5A, 6A, 7A and 8A.

In reference to FIGS. 2A and 2B, a first support 24 made of, forexample, metal having a plurality of recesses 22 provided with a firstthrough-hole 26 which runs through the first support 24 is prepared. Ina circumference of the first support 24, a first conductor 20 made of,for example, Cu is formed. In reference to FIGS. 3A and 3B, so as tocover an upper surface of the first support 24, a first film 25 made of,for example, a fluorine resin is formed. Sandwiching the first film 25,the first metal 14 is pressed into the plurality of recesses 22. A flatmaterial, for example, is pressed against the top part of the firstmetal 14 to planarize the top part of the first metal 14. In FIGS. 4 and5, the first film 25 is omitted from the drawing.

In reference to FIGS. 4A and 4B, on the first film 25 which covers theupper surface of the first support 24, a plurality of firstsemiconductor chips 10 are mounted so as to be surrounded by the firstmetals 14. For the mounting of the first semiconductor chip 10, athermosetting adhesive, a thermoplastic adhesive, and such can be used.

In reference to FIGS. 5A and 5B, over the first metal 14, the adjacentfirst semiconductor chips 10 are coupled to each other with the firstwire 18. The first semiconductor chip 10 mounted in an outermostcircumference of the first support 24 out of the plurality of firstsemiconductor chips 10 mounted, more specifically, the firstsemiconductor chip 10 adjacent to the first conductor 20 is coupled tothe first conductor 20 with the first wire 18 over the first metal 14.

In reference to FIGS. 6A and 6B, carrying out similar processes to thosemanufacturing processes shown in FIGS. 2A to 3B, a second support 30which is formed by pressing a second metal 16 into a plurality ofrecesses 22 sandwiching a second film 27 made of, for example, afluorine resin is prepared. In the second support 30, a secondthrough-hole 29 which runs through the second support 30 is provided andthe top part of the second metal 16 is, as similar to that of the firstmetal 14, being planarized. The first metal 14 and the second metal 16are coupled to each other so as to sandwich the first wire 18, and thefirst support 24 and the second support 30 are joined together. Inbetween the first support 24 and the second support 30, a resin isimpregnated and the resin 12 which molds the first semiconductor chip 10is formed.

In reference to FIGS. 7A and 7B, while pumping in a compressed airthrough the first through-hole 26 provided on the first support 24 andthrough the second through-hole 29 provided on the second support 30,the first support 24 is peeled off from the first film 25 and the secondsupport 30 is peeled off from the second film 27. More specifically, thefirst support 24 and the second support 30 are peeled off from the resin12. Thereafter, the first film 25 and the second film 27 are peeled offfrom the resin 12. In reference to FIGS. 8A and 8B, by cutting off theresin 12 at a predefined position using, for example a dicing method,the plurality of first semiconductor chips 10 are respectively diced.Consequently, the semiconductor device of the first embodiment iscompleted.

According to the first embodiment, as shown in FIGS. 1A and 1B, thefirst semiconductor chip 10 is molded with the resin 12 and, in theresin 12 in the circumference of the first semiconductor chip 10, thefirst metal 14 exposed on the lower surface of the resin 12 and thesecond metal 16 exposed on the upper surface of the resin 12 areprovided. Further, with the first wire 18 coupled to the first metal 14and the second metal 16 being sandwiched therebetween, the firstsemiconductor chip 10 is electrically coupled to the first metal 14 andthe second metal 16. Therefore, the first semiconductor chip 10, via thefirst metal 14 and the second metal 16, can be electrically coupled tothe outside. Further, the first semiconductor chip 10 is packagedwithout using wiring substrates and lead frames which are of expensivematerials. Consequently, a cost reduction of a semiconductor device canbe promoted. Further, as for the first metal 14 and the second metal 16,as the material of an inexpensive Cu ball plated with Au can be used, acost reduction of the semiconductor device can be further promoted.

According to the manufacturing method of the first embodiment, as shownin FIGS. 3A, 3B, 6A and 6B, by pressing the first metal 14 into theplurality of recesses 22 provided on the first support 24, the firstmetal 14 is formed on the first support 24 and, by pressing the secondmetal 16 into the plurality of recesses 22 provided on the secondsupport 30, the second metal 16 is formed on the second support 30.Consequently, as shown in FIGS. 6A and 6B, when forming the resin 12,the first metal 14 and the second metal 16 which are sufficientlyexposed on the resin 12 can be made. Furthermore, the first metal 14 andthe second metal 16 can be securely fixed on the first support 24 and onthe second support 30.

Further, as shown in FIGS. 3A, 3B, 6A and 6B, the top part of the firstmetal 14 and the top part of the second metal 16 are being planarized.Therefore, the flat area of the first metal 14 and the second metal 16can be increased. Consequently, the process shown in reference to FIGS.6A and 6B to couple the first metal 14 and the second metal 16 to eachother so as to sandwich the first wire 18 can be easily carried out.Therefore, the process of planarizing the top part of the first metal 14is preferable to be carried out prior to coupling the adjacent firstsemiconductor chips 10 to each other with the first wire 18 over thefirst metal 14, and the process of planarizing the top part of thesecond metal 16 is preferable to be carried out prior to joining thefirst support 24 and the second support 30 together.

Further, as shown in FIGS. 3A, 3B, 6A and 6B, the first metal 14 isformed on the first support 24 sandwiching the first film 25 and thesecond metal 16 is formed on the second support 30 sandwiching thesecond film 27. The first film 25 and the first support 24 as well asthe second film 27 and the second support 30 have superior moldreleasability. Therefore, as shown in FIGS. 7A and 7B, when peeling offthe first support 24 and the second support 30 from the resin 12, ascompared with the case where the first support 24 and the second support30 are directly joined to the resin 12, the first support 24 and thesecond support 30 can be easily peeled off from the resin 12.Furthermore, even when either one of the first film 25 or the secondfilm 27 is provided, an easiness of peeling off the first support 24 andthe second support 30 from the resin 12 can be improved.

Particularly, as shown in FIGS. 3A, 3B, 6A and 6B, when pressing thefirst metal 14 into the recess 22 provided on the first support 24sandwiching the first film 25 and when pressing the second metal 16 intothe recess 22 provided on the second support 30 sandwiching the secondfilm 27, as the thickness of the first film 25 and the second film 27serves as a buffer, a tolerable variation range of diameters of thefirst metal 14 and the second metal 16 can be made large.

Further, as shown in FIGS. 2A, 2B, 6A and 6B, the first through-hole 26which runs through the first support 24 is provided on the first support24 and the second through-hole 29 which runs through the second support30 is provided on the second support 30. Therefore, as shown in FIGS. 7Aand 7B, while pumping in the compressed air through the firstthrough-hole 26 and through the second through-hole 29, the firstsupport 24 and the second support 30 can be peeled off from the resin12. Consequently, peeling off the first support 24 and the secondsupport 30 from the resin 12 can be easily carried out. Meanwhile, thegas pumped in through the first through-hole 26 and the secondthrough-hole 29 is not limited to a compressed air, and other gases suchas nitrogen may be used. Furthermore, even when either one of the firstthrough-hole 26 or the second through-hole 29 is provided, an easinessof peeling off the first support 24 and the second support 30 from theresin 12 can be improved.

Particularly, in the case where the first through-hole 26 is formed onthe recess 22 provided on the first support 24, prior to mounting thefirst metal 14, while air is being sucked out through the firstthrough-hole 26 to secure the first film 25 onto the first support 24,the first metal 14 can be mounted under this condition. Further, thediameter of the first through-hole 26 is preferable to be smaller thanthe thickness of the first film 25. When the diameter of the firstthrough-hole 26 is larger than the thickness of the first film 25, thereis a danger of the first film 25 creeping into the first through-hole 26clogging the first through-hole 26. If the first through-hole 26 isclogged by the first film 25, when peeling off the first support 24 fromthe resin 12, the gas is not pumped in well and the easiness of peelingoff the first support 24 is impaired. Similarly, when the secondthrough-hole 29 is formed on the recess 22 provided on the secondsupport 30, while the second film 27 is being secured on the secondsupport 30, the second metal 16 can be mounted. Furthermore, thediameter of the second through-hole 29 is preferable to be smaller thanthe thickness of the second film 27.

Further, as shown in FIGS. 2A and 2B, in the circumference of the firstsupport 24, the first conductor 20 is being formed. Therefore, as shownin FIGS. 5A and 5B, the first semiconductor chip 10 mounted in theoutermost circumference of the first support 24 out of the plurality offirst semiconductor chips 10 mounted, more specifically, the firstsemiconductor chip 10 adjacent to the first conductor 20 can be coupledto the first conductor 20 with the first wire 18 over the first metal14. Consequently, the first semiconductor chip 10 in the outermostcircumference can also be used.

Further, as shown in FIGS. 7A and 7B, the first support 24 and thesecond support 30 are taken off from the resin 12. Therefore, the firstsupport 24 and the second support 30 can be repeatedly used.Consequently, a cost reduction of a manufacturing cost can be promoted.

In the first embodiment, as shown in FIGS. 5A and 5B, the example ofdirectly coupling the adjacent first semiconductor chips 10 to eachother with the first wire 18 over the first metal 14 has been described.However, as shown in FIG. 9, by forming a second conductor 32 betweenadjacent first semiconductor chips 10, the adjacent first semiconductorchips 10 may be coupled to each other via the second conductor 32. Inthis case, via the second conductor 32, the adjacent first semiconductorchips 10 can be easily coupled to each other, even when having differentwiring patterns.

Furthermore, while the example has been described, in which the firstsemiconductor chip 10 is mounted on the first support 24 so as to besurrounded by the first metals 14 as shown in FIGS. 4A and 4B, it is notlimited to this. As to make the adjacent first semiconductor chips 10coupled to each other with the first wire 18 over the first metal 14,the first semiconductor chips 10 may be formed as to be adjacent to thefirst metal 14.

Further, as shown in FIGS. 8A and 8B, while the example of cutting offthe resin 12 into a plurality of first semiconductor chips 10 to berespectively diced has been described, it is not limited to this. Theresin 12 may be cut off so as to include a plurality of firstsemiconductor chips 10 such as 2 pieces, 3 pieces, and so on.

Further, while the example of the first metal 14 and the second metal 16being in a spherical shape has been described, it is not limited tothis. However, while the first metal 14 and the second metal 16 arebeing in a spherical shape, as shown in FIGS. 3A, 3B, 6A and 6B, whenmounting the first metal 14 onto the recess 22 provided on the firstsupport 24 and when mounting the second metal 16 onto the recess 22provided on the second support 30, a tolerable variation range ofdiameters of the first metal 14 and the second metal 16 can be madelarge.

Further, while the example of the first film 25 and the second film 27being made of a fluorine resin has been described, it is not limited tothis. As long as the material is superior in terms of mold releasabilityfrom the first support 24 and the second support 30, other materials maybe used. Furthermore, while the example of mounting the firstsemiconductor chip 10, using a thermosetting adhesive or a thermoplasticadhesive, on the first film 25 which covers the first support 24 hasbeen described, it is not limited to this. As to make the first film 25to be easily peeled off from the resin 12, as long as it is a mountingmethod of a low adhesiveness between the first semiconductor chip 10 andthe first film 25, other mounting methods may be used. Further, whilethe example of the first metal 14 and the second metal 16 using thematerial of the Cu ball plated with Au has been described, it is notlimited to this. The material of a silver (Ag) plated Cu ball, thematerial of a solder plated Cu ball, and such may be used. Particularly,an inexpensive material is preferable.

Second Embodiment

A second embodiment of the present invention is an example of stackingthe semiconductor devices of the first embodiment. FIG. 10 is across-sectional view showing the semiconductor devices of the firstembodiment being stacked in package-on-package. In reference to FIG. 10,the first metal 14 exposed on the lower surface of the resin 12 of anupper semiconductor device 31 and the second metal 16 exposed on theupper surface of the resin 12 of a lower semiconductor device 33 arecoupled to each other via a solder 35. Therefore, in the semiconductordevice of the first embodiment, as the first metal 14 is exposed on thelower surface of the resin 12 and the second metal 16 is exposed on theupper surface of the resin 12, the upper semiconductor device 31 and thelower semiconductor device 33 can be electrically coupled to each other.In FIG. 10, while the example of stacking semiconductor devices in twolayers has been described, stacking in layers of three, four, and so onmay naturally be possible.

Third Embodiment

A third embodiment of the present invention is an example of mounting asecond semiconductor chip 34 on the first semiconductor chip 10. FIG.11A is a top view of a semiconductor device of the third embodiment andFIG. 11B is a cross-sectional view taken along the line A-A in FIG. 11A.In FIG. 11A, the first semiconductor chip 10, the second semiconductorchip 34, and such are shown viewed through the resin 12.

In reference to FIGS. 11A and 11B, the second semiconductor chip 34 isprovided on the first semiconductor chip 10, and the first semiconductorchip 10 and the second semiconductor chip 34 are molded with the resin12. A second wire 36 which couples the second semiconductor chip 34 tothe first metal 14 and the second metal 16 and is made of, for example,Au is being coupled to the first metal 14 and the second metal 16 so asto be sandwiched therebetween. As other configurations are the same asthose of the first embodiment and as shown in FIGS. 1A and 1B, theirdescriptions are omitted.

According to the third embodiment, the second semiconductor chip 34 isprovided on the first semiconductor chip 10, and the secondsemiconductor chip 34 is being electrically coupled to the first metal14 and the second metal 16 with the second wire 36 which is coupled tothe first metal 14 and the second metal 16 being sandwichedtherebetween. Therefore, via the first metal 14 and the second metal 16,the second semiconductor chip 34 can also be electrically coupled to theoutside. Consequently, in the third embodiment, as compared with that ofthe first embodiment, a packaging density of a semiconductor chip can beincreased twice as high. Further, as compared with that of the firstembodiment, as the number of materials used is not much changed,according to the third embodiment, while preventing the number ofmaterials from being increased, the packaging density can be increasedtwice as high. Consequently, in the third embodiment, as compared withthe first embodiment, a cost reduction can be further promoted.

Next, referencing to FIGS. 12A to 13B, a method for manufacturing thesemiconductor device of the third embodiment will be described. FIGS.12A and 13A are the top views and FIGS. 12B and 13B are cross-sectionalviews taken along the lines A-A in respective FIGS. 12A and 13B.

As the processes up to mounting the first semiconductor chip 10 are thesame as those of the first embodiment and are shown in FIGS. 2A to 4B,their descriptions are omitted. In reference to FIGS. 12A and 12B, onthe plurality of semiconductor chips 10, the second semiconductor chips34 are respectively mounted.

In reference to FIGS. 13A and 13B, the adjacent first semiconductorchips 10 and the adjacent second semiconductor chips 34 are, over thefirst metal 14, electrically coupled to each other with the first wire18 and the second wire 36. The first semiconductor chip 10 and thesecond semiconductor chip 34 which are mounted in the circumference ofthe first support 24 and adjacent to the first conductor 20 and thefirst conductor 20 are coupled, over the first metal 14, with the firstwire 18 and the second wire 36. Consequently, the second semiconductorchip 34 in the outermost circumference can also be coupled with thesecond wire 36 and, thus, becomes usable.

As the process of joining the first support 24 and the second support 30together, the process of forming the resin 12, the process of peelingoff the first support 24 and the second support 30 from the resin 12,and the process of cutting off the resin 12 are the same as those of thefirst embodiment and are shown in FIGS. 6A to 8B, their descriptions areomitted. Furthermore, in the process of joining the first support 24 andthe second support 30 together, the first metal 14 and the second metal16 are coupled to each other so as to also sandwich the second wire 36.

According to the method for manufacturing the semiconductor device ofthe third embodiment, by merely adding the process of mounting thesecond semiconductor chip 34 on the first semiconductor chip 10 as shownin FIGS. 12A and 12B and the process of coupling the adjacent secondsemiconductor chips 34 to each other with the second wire 36 over thefirst metal 14 as shown in FIGS. 13A and 13B, the semiconductor devicehaving a packaging density of twice as high compared with thesemiconductor device of the first embodiment can be made.

Furthermore, in the third embodiment, as shown in FIG. 9, via the secondconductor 32, the adjacent first semiconductor chips 10 and the adjacentsecond semiconductor chips 34 can be coupled to each other, over thefirst metal 14, with the first wire 18 and the second wire 36.Consequently, even when wiring patterns of the adjacent secondsemiconductor chips 34 are different from each other, via the secondconductor 32, the coupling with the second wire 36 can be easily carriedout. Further, as shown in FIG. 10, the semiconductor device of the thirdembodiment may also be stacked.

Now, several aspects of the present invention are summarized.

A semiconductor device according to a first aspect of the presentinvention includes: a first semiconductor chip molded with a resin; afirst metal provided in the resin in a circumference of the firstsemiconductor chip, and being exposed on a lower surface of the resin; asecond metal provided in the resin over the first metal, and beingexposed on an upper surface of the resin; and a first wire coupling thefirst semiconductor chip to the first metal and the second metal. Thefirst wire is coupled to the first metal and the second metal so as tobe sandwiched therebetween. According to this aspect of the presentinvention, a semiconductor device having a first semiconductor chippackaged can be made without using lead frames or wiring substrates.Accordingly, a cost reduction of a semiconductor device can be promoted.

In this arrangement, the first metal and the second metal may be in aspherical shape.

In this arrangement, the semiconductor device may also include: a secondsemiconductor chip provided on the first semiconductor chip, and moldedwith the resin; and a second wire coupling the second semiconductor chipto the first metal and the second metal. The second wire may be coupledto the first metal and the second metal so as to be sandwichedtherebetween. With this arrangement, a semiconductor device having afirst semiconductor chip and a second semiconductor chip packaged can bemade without using lead frames or wiring substrates. Accordingly, a costreduction of a semiconductor device can be further promoted.

A method for manufacturing a semiconductor device according to a secondaspect of the present invention includes: forming a plurality of firstmetals on a first support; mounting a plurality of first semiconductorchips on the first support so as to be adjacent to some of the pluralityof first metals; coupling adjacent first semiconductor chips among theplurality of first semiconductor chips to each other with a first wireover the first metals; forming a plurality of second metals on a secondsupport; joining the first support and the second support byrespectively coupling the plurality of first metals and the plurality ofsecond metals to each other so as to sandwich the first wire; forming aresin that molds the plurality of first semiconductor chips by fillingan area between the first support and the second support with resin;peeling off the first support and the second support from the resin; andcutting the resin so as to include the first semiconductor chip.According to this aspect of the present invention, a semiconductordevice having a first semiconductor chip packaged can be made withoutusing lead frames or wiring substrates. Accordingly, a cost reduction ofa semiconductor device can be promoted.

In this method, the forming of the plurality of first metals may beforming the plurality of first metals by pressing the first metals intoa plurality of recesses provided on the first support; and the formingof the plurality of second metals may be forming the plurality of secondmetals by pressing the second metals into a plurality of recessesprovided on the second support. With this method, the first metals andthe second metals can be sufficiently exposed on the resin. Also, thefirst metals and the second metals can be securely fixed on the firstsupport and the second support.

This method may also include: planarizing a top part of the plurality offirst metals prior to the coupling of the adjacent first semiconductorchips to each other with the first wire over the first metals; andplanarizing a top part of the plurality of second metals prior to thejoining of the first support and the second support. With this method,flat areas of the first metals and the second metals can be increased.Therefore, the first metals and the second metals can be easily coupledto each other sandwiching the first wire.

In this method, the forming of the plurality of first metals may beforming the plurality of first metals on the first support so as tosandwich the first film; and the forming of the plurality of secondmetals may be forming the plurality of second metals on the secondsupport so as to sandwich the second film. With this method, the firstsupport and the second support can be easily peeled off from the resin.

In this method, the first support may include a first through-hole whichruns through the first support; the second support may include a secondthrough-hole which runs through the second support; and the peeling offof the first support and the second support from the resin may bepeeling off the first support and the second support from the resin bypumping in air through the first through-hole and the secondthrough-hole. With this method, the first support and the second supportcan be easily peeled off from the resin.

In this method, the forming of the plurality of first metals may beforming the plurality of first metals on the first support so as tosandwich a first film; the forming of the plurality of second metals maybe forming the plurality of second metals on the second support so as tosandwich a second film; the first support may include a firstthrough-hole having a diameter smaller than the thickness of the firstfilm, and which runs through the first support; the second support mayinclude a second through-hole having a diameter smaller than thethickness of the second film, and which runs through the second support;and the peeling off the first support and the second support from theresin is peeling off of the first support and the second support fromthe resin by pumping in air through the first through-hole and thesecond through-hole. With this method, it is possible to prevent thefilm from creeping into the through-hole and clogging the through-hole.Accordingly the first support and the second support can be easilypeeled off from the resin.

This method may also include: forming a first conductor in acircumference of the first support; and coupling the first semiconductorchips adjacent to the first conductor to the first conductor with thefirst wire over the first metals. With this method, the semiconductorchips mounted in an outermost circumference of the first support out ofthe plurality of first semiconductor chips mounted can be coupled withthe first wire.

This method may also include forming a second conductor in between theadjacent first semiconductor chips. The coupling of the adjacent firstsemiconductor chips to each other with the first wire over the firstmetals may also include coupling the adjacent first semiconductor chipsto each other with the first wire over the first metals via the secondconductor. With this method, even when the adjacent first semiconductorchips have different wiring patterns, the adjacent first semiconductorchips can be easily coupled to each other with the first wire.

In this method, the first metals and the second metals may be in aspherical shape.

This method may also include: mounting a plurality of secondsemiconductor chips respectively on the plurality of first semiconductorchips; and coupling adjacent second semiconductor chips to each otherwith a second wire over the first metals. The joining of the firstsupport and the second support may be joining the first support and thesecond support by coupling the plurality of first metals and theplurality of second metals so as to sandwich the first wire and thesecond wire, respectively. With this method, a semiconductor devicehaving a first semiconductor chip and a second semiconductor chippackaged can be made without using lead frames or wiring substrates.Accordingly, a cost reduction of a semiconductor device can be furtherpromoted.

This method may also include: forming a first conductor in thecircumference of the first support; and coupling the secondsemiconductor chips adjacent to the first conductor to the firstconductor with the second wire over the first metals. With this method,the second semiconductor chips mounted in the outermost circumference ofthe first support out of the plurality of second semiconductor chipsmounted can be coupled with the second wire.

This method may also include forming a second conductor in between theadjacent first semiconductor chips. The coupling of the adjacent secondsemiconductor chips to each other with the second wire over the firstmetals may be coupling the adjacent second semiconductor chips to eachother with the second wire over the first metals via the secondconductor. With this method, even when the adjacent second semiconductorchips have different wiring patterns, the adjacent second semiconductorchips can be easily coupled to each other with the second wire.

According to some aspects of the present invention, a semiconductordevice having a semiconductor chip packaged can be made without usinglead frames or wiring substrates. Consequently, a cost reduction of asemiconductor device can be promoted.

While the preferred embodiments of the present invention have beendescribed in details above, the invention is not limited to thosespecific embodiments and, within the spirit and scope of the inventionas defined in the appended claims, various modifications and alterationsmay be made.

1. A method for manufacturing a semiconductor device comprising: forminga plurality of first metals on a first support; mounting a plurality offirst semiconductor chips on the first support so as to be adjacent tosome of the plurality of first metals; coupling adjacent firstsemiconductor chip among the plurality of first semiconductor chips toeach other with a first wire over the first metals; forming a pluralityof second metals on a second support; joining the first support and thesecond support by respectively coupling the plurality of first metalsand the plurality of second metals to each other so as to sandwich thefirst wire; forming a resin that molds the plurality of firstsemiconductor chips by filling an area between the first support and thesecond support with a resin; peeling off the first support and thesecond support from the resin; and cutting the resin so as to includethe first semiconductor chip.
 2. The method for manufacturing asemiconductor device according to claim 1, wherein the forming of theplurality of first metals is forming the plurality of first metals bypressing the first metals into a plurality of recesses provided on thefirst support; and the forming of the plurality of second metals isforming the plurality of second metals by pressing the second metalsinto a plurality of recesses provided on the second support.
 3. Themethod for manufacturing a semiconductor device according to claim 1,further comprising: planarizing a top part of the plurality of firstmetals prior to the coupling of the adjacent first semiconductor chipsto each other with the first wire over the first metals; and planarizinga top part of the plurality of second metals prior to the joining of thefirst support and the second support.
 4. The method for manufacturing asemiconductor device according to claim 1, wherein the forming of theplurality of first metals is forming the plurality of first metals onthe first support so as to sandwich the first film; and the forming ofthe plurality of second metals is forming the plurality of second metalson the second support so as to sandwich the second film.
 5. The methodfor manufacturing a semiconductor device according to claim 1, whereinthe first support includes a first through-hole which runs through thefirst support; the second support includes a second through-hole whichruns through the second support; and the peeling off of the firstsupport and the second support from the resin is peeling off the firstsupport and the second support from the resin by pumping in air throughthe first through-hole and the second through-hole.
 6. The method formanufacturing a semiconductor device according to claim 1, furthercomprising: forming a first conductor in a circumference of the firstsupport; and coupling the first semiconductor chip adjacent to the firstconductor to the first conductor with the first wire over the firstmetals.
 7. The method for manufacturing a semiconductor device accordingto claim 1, further comprising: forming a second conductor in betweenthe adjacent first semiconductor chips; wherein the coupling of theadjacent first semiconductor chips to each other with the first wireover the first metals comprises: coupling the adjacent firstsemiconductor chips to each other with the first wire over the firstmetals via the second conductor.
 8. The method for manufacturing asemiconductor device according to claim 1, further comprising: mountinga plurality of second semiconductor chips respectively on the pluralityof first semiconductor chips; and coupling adjacent second semiconductorchips to each other with a second wire over the first metals; whereinthe joining of the first support and the second support is joining thefirst support and the second support by coupling the plurality of firstmetals and the plurality of second metals so as to sandwich the firstwire and the second wire respectively.